DRIE process optimization to fabricate vertical silicon nanowires using gold nanoparticles as masks

Thanh Tung Bui, Hoan Phuc Tu and Mau Chien Dang

  • ANSN Editor
Keywords: nano


Silicon nanowires have applications in various fields, e.g. vertical transistors, chemical or biological sensors, energy conversion, and storage devices. So far they have typically been obtained by bottom-up methods such as vapor–liquid–solid (VLS) synthesis, starting from metal nanoparticles. In this study, silicon nanowires are fabricated by dry reactive-ion etching using gold nanoparticles as a mask. Starting with the Bosch process, the cycle of SF6 plasma etching and C4F8 plasma deposition was optimized to control the quality of the resulting silicon nanowires

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