Study of RF performance of surrounding gate MOSFET with gate overlap and underlap

Angsuman Sarkar

Abstract

In this paper a simulation study is used to investigate the RF performance of surrounding gate (SRG) MOSFET. The effect of nonsymmetrical gate structure caused by non- ideality in fabrication process has also been taken care into consideration. The important RF figure-of-merits such as unity-gain cut-off frequency f _T and maximum operating frequency f _MAX are studied with the help of a 2D device simulator. Their trends related to the variation of different design parameters such as radius, oxide thickness, gate length, and doping along the downscaling have also been reported