The effect of the etching process on the morphology and photoluminescence of porous amorphous SiC

Hoai Anh Nguyen, Kensuke Miyajima, Tadashi Itoh, Tran Cao Dao, Tuan Anh Cao, Truc Quynh Ngan Luong and Masaaki Ashida

Abstract

Porous amorphous silicon carbide (P-aSiC) was prepared by an electrochemical etching method. The surface morphology of the samples was measured by an atomic force microscope (AFM). Photoluminescence (PL) and PL excitation spectra of the samples were measured at room temperature. We observed clear dependence of PL spectra and morphology on fabrication conditions. Based on these results, we propose the emitting mechanism of the PL from the samples