Quantitative measure of nitrogen vacancy related effects in SmN and EuN

Muhammad Azeem

Abstract


Density of charge carriers is estimated for SmN and EuN thin films. SmN is found to be weakly doped by nitrogen vacancies with an estimated carrier density of the order of 1024-1025 m-3 whereas the EuN thin film is heavily doped with the carrier density of the order 1027 m-3. The free carriers cause the significant optical absorption in the sub-gap region and mask the true energy gap. Further, the onset of the interband transition for the SmN is around 1.2 eV and for the EuN it is 0.9 eV. The results indicate a disagreement in the theoretical and the experimental values.


Keywords


optical properties, thin films, ferromagnetic semiconductors, spintronics

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Published by: IOP Publishing and Vietnam Academy of Science and Technology
Frequency: Articles appear online as they are published with print copies published 4 times per year
ISSN: Print: 2043-6254; Online: 2043-6262
DOI Range: 10.1088/issn.2043-6262

© Copyright 2016 Advances in Natural Sciences: Nanoscience and Nanotechnology